发明名称 Integrated circuit astable trigger stage - has two parallel sets of leakage compensating IGFETs in gate circuit of supply transistor
摘要 <p>The integrated circuit for an astable trigger circuit with a frequency independent of manufacturing leakages includes an insulated gate-FET (TD10) in series with parallel sets of IG-FET's (TD11,TD12) across the supply connections (UDD,USS). They are connected to the gate electrode of the supply transistor (Td7). The two sets of transistors (TD11,12) compensate for channel width faults and also fluctuations of the supply transistor. This transistor operates to charge the two capacitors (C1,C2) of the cross coupled enhancement transistors (TE2,4) for the astable trigger stage. These have load resistances formed by depletion transistors (TD1,3) with short circuit source/gate paths.</p>
申请公布号 DE3027456(A1) 申请公布日期 1982.02.04
申请号 DE19803027456 申请日期 1980.07.19
申请人 LICENTIA PATENT-VERWALTUNGS-GMBH 发明人 KUHLMANN,JOACHIM,DIPL.-PHYS.;SCHOPPE,KARL,ING.
分类号 G05F3/24;(IPC1-7):01L23/56;01L27/04;03K3/354 主分类号 G05F3/24
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