| 摘要 |
PURPOSE:To form a dense amorphous semiconductor film having less voids and defects on a substrate by chemically activating reactive gas containing mainly silicon by induction energy and then accelerating and flying the gas via DC electric field. CONSTITUTION:A plurality of substrates 1 are mounted in a quartz boat 1. A metallic electrode 11 made of stainless steel or the like is formed between the substrates, and DC voltage of -200--500V is applied between the electode and the substrates. Reactive gas, e.g., SiH4, SiF4, etc. and impurity are supplied to a container 7, microwave energty of 1-100GHz is applied in 10-300W simultaneously as high frequency energy, and the reactive gas is chemically activated and decomposed. The thus activated and decomposed gas is accelerated by a DC electric field, and is accumulated on the substrates 1. Thus, an amorphous semiconductor film having dense configuration can be formed on the substrates 1. |
