| 摘要 |
PURPOSE:To improve the electric characteristics by forming compound semiconductor protective film of different etching properties on a compound semiconductor layer formed on a compound semiconductor substrate, forming an ion injected region through the protective film and heat treating it to remove rhe protective film. CONSTITUTION:A high resistance GaGs layer 2 is grown by 1mum on a semiinsulating substrate 1, and Ga0.5Al0.5As layer protective film 3 is continuously grown by 0.2mum thereon. Si ions are injected through the later 3 to the layer 2 to form an injection region 5. Then, it is heat treated to activate the ion injected layer 5 to form an active layer 5'. The layer 3 is etched and removed to form a source 6, drain 8 and gate 7 electrodes. Thus, the compound semiconductor having excellent electric properties can be obtained. |
