| 摘要 |
PURPOSE:To form a crystalline surface approximating to no defect to control the deformation of the shape of a semiconductor wafer by selectively forming grooves on the back surface of the wafer, heat treating it to deform the front surface in recess state and the back surface in raised state and correcting the crystalline defects on the front surface of the wafer to the back surface groove region. CONSTITUTION:Grooves 12 are concentrically formed on the back surface of the silicon single crystal wafer 11. The groove has a depth of 0.5-10mum, a width of 0.5mum to several mm., and interval between the grooves of 0.5mum to several mm.. The wafer 11 is the heat treated in inert gas, the back surface of the wafer is deformed in recess state and the front surface is deformed in raised state, and strong crystal stress field is produced in the vicinity of the periphery 13 of the grooves 12. This region becomes the center of collecting the crystalline defect existing in the surface region 14 of the wafer. Thus, the surface defects of the wafer can be reduced, and the control of the deformation of the shape can be simultaneously performed, and a large sized semiconductor wafer adapted for high density integrated and finely machined configuration can be obtained. |
