| 摘要 |
PURPOSE:To facilitate the transfer of a PR pattern by forming a thin film pattern made of material having high volumetric thermal expansion coefficient larger than the silicon nitride or the like on the back surface of a semiconductor wafer, and forming the raised part on the front surface of the wafer and the recessed part on the back surface. CONSTITUTION:A silicon nitrided film 12 patterned concentrically is formed on the back surface of a silicon wafer. The nitrided film has a thickness of 500Angstrom to several mum, and width and interval of 1mum to several mm.. Since the volumetric thermal expansion coefficient of the silicon nitrided film is larger than the silicon, the surface of the wafer becomes raised part, and the back surface becomes recessed state, and the wafer is thus uniformly deformed elastically. Thus, the wafer is controlled for the warping deformation, and the wafer is preferably adsorbed to the stage when the fine photoresist pattern is transferred to the silicon to facilitate the transfer, and the wafer having high crystalline layer quality can be obtained. |
