| 摘要 |
PURPOSE:To enable the exposure at high speed by omitting the multiplication and division of the correcting calculation in case of exposing by correcting the every pattern at the electron beam emitting time and calculating at high speed. CONSTITUTION:Exposure reference emitting time data Ts is stored in a register 1, proximity effect correcting data alpha1-alphan are inputted, and both data are multiplied by an arithmetic unit 2. The data TSalphai thus obtained is stored in a memory 3. Then, reference emitting time data TS is supplied to the register 4, code proximity correction data are sequentially supplied to the resist 6, and the exposure of the wafer is started. An arithmetic unit 5 outputs data signal Ts+Tsalphai, a pulse generator 7 outputs a pulse based on this signal, and the exposure is thus executed. Thus, the corrected data can be obtained only by the addition or subtraction of the content of the address corresponding to the corrected data alphai by the reference emitting time data in the exposure, and high speed exposure can be obtained. |
