| 摘要 |
PURPOSE:To eliminate the mismatching of an ion injection region with a storage electrode region in a manufacturing method for the channel stopper of an MOS type DRAM by forming the ion injection region and the electrode region by a self-aligning method. CONSTITUTION:A field oxidized film 21 is formed on the surface of a P type silicon substrate 20 to form the first gate oxidized film 22 of 400Angstrom thick, a polycrystalline silicon layer 23 of 3,000Angstrom thick is accumulated thereon, N type impurity is diffused in the layer 23, a photoresist film 24 is formed thereon, and a window is opened. Then ions are injected to form an N type ion injection layer 25, aluminum 26 is then accumulated in the thickness of 2,000Angstrom , the resist film 24 is removed, and the aluminum 26 thereon is lifted off. With the residual aluminum 26 as a mask it is etched, and the first storage gate electrode 27 is formed. |
