| 摘要 |
PURPOSE:To obtain an integrated circuit which has higher noise shielding effect by forming a semiconductor region of another layer in a semiconductor region for shielding noise and reducing its intrinsic resistance. CONSTITUTION:A P<-> type well region 5' and an N<+> type conductive type layer 7' are formed in an N type silicon substrate 6', and dioxidized silicon film 4', polycrystalline silicon layer 3', dioxidized silicon layer 2', and polycrystalline silicon layer 1' are formed thereon. Another semiconductor region 7' is formed in the semiconductor region 5' for shielding the capacity, and since the intrinsic resistance value under the capacity is thus reduced, the shield can be further completed. The shielding region can be formed simultaneously in the step of manufacturing the C-MOS. |
