| 摘要 |
PURPOSE:To obtain a photoresist composition with superior heat stability for minute working by blending a cyclized diene polymer and a photocross-linking agent or a photosensitizer with a specified isocyanuric acid deriv. CONSTITUTION:To 100pts.wt. cyclized diene polymer having 5-95% degree of cyclization is added 0.1-10pts.wt. compound represented by the formula (where each of R1-R3 is alkyl, alkenyl, aralkyl, aryl a substituent contg. an ether bond, a substituent contg. a thioether bond, a substituent contg. an amino bond or a substituent contg. a phenolic hydroxyl group and one or more among R1-R3 are substituents each contg. a phenolic hydroxyl group), and they are dissolved in xylene or the like together with 0.5-10pts.wt. photocross-linking agent or photosensitizer to obtain a photoresist composition. The composition is applied to a wafer or the like, dried at 80 deg.C, exposed, and developed to obtain a resist pattern with high resolution and high corrosion resistance. |
