| 摘要 |
PURPOSE:To obtain a stable magnetic bubble memory device to increasing the margin of gate operation by applying a holding magnetic field along a major line. CONSTITUTION:According to an in-surface revolving magnetic field HD, a magnetic bubble transferred through a major line consisting of permalloy elements 14-, 15-, and 16- reaches the point (b) of permalloy 19 forming a gate from the point (a) of the element 15. Further, the magnetic bubble is tranferred to a minor line composed of permalloy elements 20, 17 and 18 to complete transfer in operation. Applying a holding magnetic field Hb along this major line increases a repulsive magnetic field at the point (a) in a 270 deg. direction and the gradient of the magnetic field between the points (a) and (b) increases, stabilizing the operation of the magnetic bubble. Therefore, the margin of a current for magnetic bubble transfer applied to a conductive pattern 21 increases and the transfer-out operation is the same, so that the stable magnetic bubble memory device is obtained. |
