| 摘要 |
1. Photovoltaic detector having its maximum sensitivy between 800 and 2 000 nm, of the type comprising a P type substrate made of Hg1-x Cdx Te , x being selected as a function of the desired spectral response and a N type zone being formed in the substrate, characterized in that x is within a range of 0,4 to 0,9, the concentration of the P carriers in the substrate is less than 10**15/cm**3, and an intrinsic zone I relatively which is formed between the zones N(6) and P(1). |
