| 摘要 |
PURPOSE:To increase the detection output of a highly integrated magnetic bubble memory element by increasing the film thickness of a magnetic garnet film by prescribed times the width of a strip magnetic domain. CONSTITUTION:A magnetic bubble having a diameter corresponding the width (w) of a strip magnetic domain held in garnet with thickness (h) is transferred and detected by a conductor pattern and a permalloy pattern stacked on the garnet with an insulating layer interposed. An increase in the ratio h/w of the thickness (h) to the width (w) increases the detection performance of a magnetic memory element linearly and the transfer margin does not vary. On the other hand, when the ratio h/w reaches 2.0, the transfer margin decreases rapidly. For this purpose, setting the ratio h/w between 1.5-2.0 increases the detection output of a highly integrated magnetic bubble memory element. |
