| 摘要 |
PURPOSE:To obtain a highly integrated memory with a low writing voltage by arranging a base layer linewise in a collector layer electrically separated from the substrate so that an emitter layer is provided in the base layer while an alumina thin layer is piled on insulator films except for the emitter layer to provide a wiring rowwise. CONSTITUTION:An n<+> buried layer 22 is formed on a p<-> type Si substrate 21 and an n type collector layer 23 is so formed epitaxially thereon that a p bese 25 is formed linewise thereon whole an n<+> emitter 27 is provided selectively. An opening 26 is etched through SiO2 24 and covered with Al 28. With a resist mask 29 applied, an alumina 30 is made by anodization and after the removal of the mask 29, an alumina thin film 32 is made on the Al layer 31 again by anodization. Then, an Al wiring 33 is provided thereon. The vertical construction of this device can upgrade the integration while the anodization enables the well-controlled formation of the alumina film thereby holding down the writing voltage below 20V. |
