| 摘要 |
A Schottky barrier contact is formed by depositing the conductor portion of the Schottky barrier contact on a surface of a semiconductor from which a conductivity determining dopant has been leached to create a surface region of reduced dopant concentration. This process is compatible with the formation of an ohmic contact to an increased conductivity portion of the semiconductor material, an unleached portion of the semiconductor material or to a leached portion of the semiconductor material.
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