| 摘要 |
PURPOSE:To obtain the device having high reliability and operating at high speed by constituting wiring and a gate electrode by metal with the high melting point and a metallic silicide with the high melting point covering said metal. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are formed on a P type Si substrate, the patterns DELTA1, DELTA2 of Mo are shaped selectively, the whole is treated in H2 containing SiH4, the surface is coated with MoSi2 51, 52, and the gate electrode 6 and the wiring 7 are molded. Poly Si is hardly formed on the oxide films 2, 3 except the Mo patterns during that time. N<+> layers 8, 9 are shaped through ion injection and heat treatment, a PSG 10 is laminated, windows are opened selectively and Al wiring 111-113 are attached. Since the metallic silicide with the high melting point is stable against acid and approximates to the property of the metal with the high melting point, the device can operate at high speed according to this constitution, and the device having high reliability, which does not corrode, is obtained. |
