| 摘要 |
PURPOSE:To prevent the thermal fatigue and deterioration of a semiconductor devide by interposing a silicon carbide pellet covered with metal selected specially on the surface as a spacer between the element and a support, securing it and integrating it, thereby lowering the thermal resistance of a high output device. CONSTITUTION:Molded silicon carbide is pressed and sintered in vacuum to form a silicon carbide plate 2. One of the metal group consisting of Sn, Ni, Cu, Ag, Au is selected, and Ag is, for example, wet plated on the plate 2 to form a spacer 4. (When this covering metal is formed in a multilayer, the metal of the uppermost layer is selected from the group). For example, a copper support 5 (or an alumina substrate 11 with a wire 10) and a power transistor element 1 are secured through the spacer 4 via solders 6, 7, are connected to leads 8, 9 (12) and are integrated as a device. Since the silicon carbide has preferable thermal conduction together with similar thermal expansion coefficient approximate to the Si and electrically conductive metallic layer is covered thereon, the device can provide thermal stability. |
