| 摘要 |
PURPOSE:To form a light emitting element which can normally operate even in a chip in which conductive defect exists by covering the conductive defect existing on a nitrided gallium semiinsulating light emitting layer with an insulating layer film different from nitrided gallium. CONSTITUTION:A light emitting element having a nitrided gallium semiinsulating lignt emitting layer 3 has a transparent substrate 1, a conductive GaN layer 2, a semiinsulating GaN light emitting layer 3, a positive electrode 4 and pair electrodes (not shown). When a defect 6 is observed after a semiinsulating GaN light emitting layer 3 is formed, one end of GaN layer 2 and facing electrodes are energized therebetween to plate copper to cover copper plating 7 on the defect 6, the defect 6 is then heat treated to form an insulating film 71. An insulating film may be formed by an anodic oxidation method instead of the method of forming the film 71. After the film 71 is formed, a positive electrode 4 is formed. |
