发明名称 |
METHOD OF WORKING |
摘要 |
PURPOSE:To accomplish fine working without use of a photoresist or an electronic resist by sublimating or evaporating material through a reaction of the material and ion with irradiaton of an accelerated ion beam on a substrate. CONSTITUTION:An oxygen ion beam 4 with an accelerated voltage of 10-30kV is irradiated on a part to be etched away of a molybdenum thin film 3 formed on a subtrate 1 and a molybdenum oxide is formed through a reaction of oxygen ion and molybdenum. The molybdenum oxide thus formed is sublimated away due to a high local temperature caused by the ion beam 4. The use of such beam can improve the accuracy of the working eliminating resists. |
申请公布号 |
JPS5718324(A) |
申请公布日期 |
1982.01.30 |
申请号 |
JP19800093473 |
申请日期 |
1980.07.07 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NISHIOKA KIYUUSAKU;HARADA HIROJI;OOHAYASHI YOSHIKAZU;MASUKO YOUJI;SHIBAYAMA ISAO |
分类号 |
G03F1/00;G03F1/72;H01L21/027;H01L21/30 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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