| 摘要 |
PURPOSE:To eliminate drop in the surface concentration of an impurities layer by arranging a silicon nitride film serving as an oxidation resisting film at a place for forming a contact hole in a silicon oxide film on the layer. CONSTITUTION:A silicon oxide film 6 serving as oxidation resisting film is provided at a place for forming a contact hole in a silicon oxide film 16 on impurities 5. A silicon oxide film 17 grows at the places not covered with the film 16, where impurities of an impurities layer 5 segregate in the silicon oxide film 17 to lower the concentration of the surface thereof but the concentration immediately below the silicon nitride film 16 won't. Then, after the removal of the silicon nitride films 3 and 16, a gate insulating film 8, a gate electrode 9 and a wiring metal film 10 is formed. Source and drain regions 11 and 12 are formed by ion injection and a substrate 1 is etched to remove the silicon oxide films 6 and 8, where contact holes 12 and 13 are formed. |
