发明名称 CUTTING METHOD FOR SEMICONDUCTOR PRESSURE SENSOR
摘要 <p>PURPOSE:To reduce the chips produced at a semiconductor at the cutting time by cutting the semiconductor and the insulator with different blades. CONSTITUTION:When a semiconductor wafer 30 formed of a plurality of resistors and diaphragms 32 on a wafer is bonded to an insulator 28 and is integrally cut, the wafer 30 and the insulator 28 are cut with different blades. For example, a semiconductor strain gauge chip 30 of wafer state is bonded onto the upper surface of the insulator 28, and is cut along broken lines 38 at a high speed initially with an exclusive silicon blade from the side of the wafer 30. Then it is cut along the broken line 40 at the insulator 28 at a low speed with an exclusive insulator (glass) blade.</p>
申请公布号 JPS5718370(A) 申请公布日期 1982.01.30
申请号 JP19800092716 申请日期 1980.07.09
申请人 HITACHI LTD 发明人 YAMADA KAZUJI;SUZUKI KIYOMITSU;KOBORI SHIGEYUKI;NISHIHARA MOTOHISA;SHIMADA SATOSHI;ARAKAWA NORIYOSHI
分类号 G01L9/04;H01L21/301;H01L29/84 主分类号 G01L9/04
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