发明名称 X RAY EXPOSURE
摘要 PURPOSE:To obtain a rate of residual film within a desired allowable range by checking the vacuum of the atmosphere on the exposed surface of a water coated with a resist below a fixed value. CONSTITUTION:When an electron beam 12 hits a target 11 provided in a bulb chamber 16 of a high vacuum a soft X ray 13 excited is irradiated down over a wafer 15 coated with a resist provided in an exposing chamber 17 of a low vacuum through a mask 14. At this point, when an experiment is made to expose at a high speed, it was found that the rate of residual film of a highly sensitive negative resist depends on the degree of the vacuum near the resist-coated surface of the wafer. In other words, the vacuum of the atmosphere on the exposed surface of the wafer coated with the resist should be less than about 1,330Pa (10 Torr). This can realize a high-speed exposure.
申请公布号 JPS5718322(A) 申请公布日期 1982.01.30
申请号 JP19800092982 申请日期 1980.07.08
申请人 NIPPON ELECTRIC CO 发明人 OKADA KOUICHI
分类号 G03F7/20;H01L21/027;(IPC1-7):01L21/30 主分类号 G03F7/20
代理机构 代理人
主权项
地址