| 摘要 |
PURPOSE:To shorten the writing time of a floating gate semiconductor memory and to reduce the writing current and voltage by forming a control gate and a floating gate around the entire periphery of an injector. CONSTITUTION:The reverse conductive source region to one conductive type semiconductor substrate and a drain region 3 are formed on the surface part of the substrate, and a floating gate 7 is partly formed through a part of an insulating film 2 on the regions 4, 3. The reverse conductive injector region 6 to the substrate 1 is formed on the surface part of the substrate 1 separately from the regions 4, 3, a control gate 5a is formed at the periphery from and isolated from the region 6, and the other part 7a of the floating gate is formed on the other part of the film 2 on the region 5a. |
