| 摘要 |
<p>Method for fixing a power semiconductor compnent, formed in a monocrystal onto a Mo counter electrode while interposing an AlSi preform, comprises depositing on the surface of the Mo, facing the preform, and/or on the face of the preform successive layers of Cr and Ag in such a way that between pure Cr and pure Ag layers is a continuously varying Cr/Ag alloy compsn. Used in mounting power components such as diodes thyristors, triacs or transistors or a Si wafer to a counter electrode. The mounting method prevents distortion of the joint on heating due to the thermal expansion coefft. differential between Mo and Si.</p> |
