发明名称 SUBSTRATE BIASING METHOD FOR SEMICONDUCTOR MEMORY
摘要 PURPOSE:To reduce the error rate to alpha rays, by changing a substrate potential according to the internal timing. CONSTITUTION:A substrate voltage VBB in the time 7 when the information read out on a bit line and a sense amplifier is inverted with the radiation of alpha rays, is made smaller for the absolute value than the substrate voltage in other time. Further, the absolute value of the substrate voltage VBB where the potential difference between bit lines from the end of precharge equalizing of the bit line to the end of sense amplifier operation is made greater than the voltage of the bit line in variation with alpha rays, is made smaller than thet of the substrate voltage in other time.
申请公布号 JPS5718084(A) 申请公布日期 1982.01.29
申请号 JP19800093462 申请日期 1980.07.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMATA MASAAKI;YOSHIHARA TSUTOMU
分类号 G11C11/417;G11C5/00;G11C11/407;G11C11/408;G11C11/409;H01L21/822;H01L27/04;H03K19/003;H03K19/094 主分类号 G11C11/417
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