| 摘要 |
PURPOSE:To provide an etching apparatus realizing a highly accurate and stable etching eliminating troubles such as deterioration of a resist by preventing a continuous rise in the temperature of a sample on a lower electrode with intermittent application of a high frequency power. CONSTITUTION:An etching gas is introduced at a gas feed port 7 exhausting through an exhaust port 6 to maintain a chamber 1 at a low pressure inside. A high frequency power is applied on a lower electrode 3 from a high frequency power source 5' to generate a plasma discharge by a high frequency between it and an upper electrode 2 grounded whereby a sample 4 placed on the lower electrode 3 is etched. The high frequency power source 5' with a chopper circuit applies a high frequency power intermittently. This prevents constinuous rise in the temperature of the sample on the lower electrode thereby eliminating troubles such as deterioration of a resist. Thus, a highly accurate and stable etching can be realized. |
