| 摘要 |
<p>PURPOSE:To facilitate the formation of an FET having good characteristics and good reliability by laminating a transparent electrode and a metal on a transparent insulating substrate and forming the two-layer electrode at the connecting part of source and drain electrodes to a semiconductor layer. CONSTITUTION:An oxidized In layer 21 and a Cr layer 22 are, for example, laminated on the overall surface of a glass substrate 1, and with a resist 23 as a mask the layers 22, 23 are sequentially selectively etched with exclusively used etchants. Subsequently, a semiconductor layer 3 of CdSe or the like and a gate insulating film 4 are laminated, a gate film 4 is patterned as a mask, and the layer 3 of the prescribed configuration is retained only in the FET. Then, an aluminum layer 24 is covered on the overall surface, a resist mask 25 is formed to etch the aluminum, and a gate electrode 5 is formed. With the film 4 as a mask the exposed film 22 is then etched, and a Cr electrode 11 is retained at the part which is contacted with the layer 3. Since the metallic electrode functions as the source and drain electrodes of the FET, the characteristics of the FET can be improved. Further, the step of manufacturing the FET can be facilitated.</p> |
