| 摘要 |
PURPOSE:To desribe a pattern having a specified width precisely on a material to be etched, by varying the distance between parallel electrodes with the elapse of the etching time for the material to be ethed. CONSTITUTION:A specimen 23 is placed on a table 22, and reacting gas is introduced at about 1X10<5> Torr. Then, the pressure is adjusted to about 0.1 Torr and high frequency electric field is applied on electrodes 21 and 24. Immediately after the sputtering etching has stated, the upper electrode 24 is rotated and lowered. Since distance between the electrodes are shortened the straight progression of molecules or ions which contribute the etching is kept, and the etching is performed only in the vertical direction. This state is kept until the most of the etching is performed. With a slight amount of the material to be etched being remained, the electrode 24 is lifted and the distance becomes large. Therefore, the straight progression of the molucules of ions of the etching gas is weakened, they are moved at random to enter the lower side of the maks, and isotropic etching is performed. In this constitution, Al 14' beneath the resistmask 16 is etched slightly, but residuum is not remained at the stepped part of an oxide film 12 and the like on a substrate 12, and precise dry etching can be performed. |
