| 摘要 |
PURPOSE:To form a semiconductor device in which a transistor and a diode are connected in series on a same substrate by forming the same conductive type diffused region as a base region on the substrate and then short-circuitting the junction with the substrate. CONSTITUTION:p Type diffused layers are respectively formed on the base and diode forming regions 8a and 8b of a transistor, for example, in an n type substrate 7. An n<+> type emitter layer 9a and an n<+> type layer 9b forming a pn junction of the diode are respectively diffused in the base region 8a and the region 8b. Subsequently, an emitter electrode E, a base electrode B and a diode terminal electrode D are formed, and the substrate 7 and the region 8b are shortcircuitted with the electrode material (aluminum) 10. Thus, a semiconductor device in which the collector of the npn transistor is connected in series with the p type region of the diode can be formed on the same chip, and can also be reduced in size. |
