| 摘要 |
PURPOSE:To form an element suitable to minute bubbles in a single-layer film system by reducing the uniaxial anisotropic energy of a surface layer of a single-layer magnetic garnet film through thermally treating the surface layer at a specific temperature before a transfer pattern is formed. CONSTITUTION:Before the formation of a transfer pattern, the surface layer of a single-layer mangetic garnet film is thermally treated at a temperature higher than 750 deg.C to reduce the uniaxial magnetic anisotropic energy of the surface layer. On a Gd3Ga5O12 substrate, for example, a magnetic garnet film (composition; Sm0.75 Lu1.75Ca0.5Fe4.5Ge0.5O12) having 1.47mum film thickness is formed by liquid- phaseepitaxial growth at 909 deg.C growing temperature to obtain a bubble holding film, thereafter, is thermally treated in oxygen atmosphere at 850 deg.C for 7min. On this film, a contiguous disk pattern of 4mum bit cycle consisting of 1,000Angstrom SiO2, 100Angstrom Cr and 4,000Angstrom Au is formed and then He<+> ion implantation is executed under 100KeV acceleration voltage and 3X10<15>/cm<2> dose amount conditions to obtain a bubble element. |
