| 摘要 |
PURPOSE:To obtain an element suitable to minute bubbles in a single-layer film system by reducing the axial anisotropic energy of the surface layer of a garnet film except right under a transfer pattern by thermally treating the surface layer at a specific temperature after the formation of the transfer pattern and before ion implantation. CONSTITUTION:A transfer pattern is formed on a single-layer magnetic garnet film and then before ion implantation, a heat treatment is carried out at a temperature higher than 750 deg.C to reduce the uniaxial magnetic anisotropic energy of the surface layer of the garnet film except right under the transfer pattern. For example, on a Gd3Ga5O12 substrate, a magnetic narnet film (composition; Sm0.75Lu1.75Ca0.5 Fe4.5 Ge0.5O12) having 1.39mum film thickness is formed by liquid-phase epitaxial growth and on it, a 4,000Angstrom Au film is formed to obtain a continuous disk pattern by ion milling. Then, a heat treatment is carried out for eight minutes in oxygen atmosphere at 870 deg.C and He<+> ion implantation is executed under 100KeV acceleration voltage and 3X10<15>/cm<2> does amount conditions to obtain a bubble element. |
