发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make a monolithic construction ideal for a substrate carrying elements or a container housing them by laminating three separate layers made of metal selected from specified groops of metals on the surface of a silicon carbide in said order. CONSTITUTION:In a monilitic construction of ceramics used for a carrier substrate or a container, a sintered body in which a small amount (for example, about ...%) of beryllium oxide or boron oxide is added to silicon carbide is used for the ceramics. Metals to be laminated are separately selected from a group of Ti, Cr, Mo, W, and Al for the first layer, a group of Cu, Ni, Pd and Pt for the second layer, and a group of Au, Ag and Pt for the third layer. They are applied in said order, for example, by evaporation, sputtering or the like. For example, said silicon carbide plate 1 is provided with said metal layers 2-5, on which a chip 7 is bonded through a solder layer 6. With such an arrangement, an element or a device is obtained excellent in the electrical insulation and heat radiation along with a large adhesivity.
申请公布号 JPS5715446(A) 申请公布日期 1982.01.26
申请号 JP19800089144 申请日期 1980.07.02
申请人 HITACHI LTD 发明人 KURIHARA YASUTOSHI;KANZAWA RIYOUSAKU;YATSUNO KOUMEI;NAKAMURA KOUSUKE
分类号 H01L21/52;H01L23/12;H01L23/15;H01L29/84;H05K1/03;H05K3/38 主分类号 H01L21/52
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