| 摘要 |
PURPOSE:To form a multilayer interconnection free from disconnection by selectively oxidizing a poly Si layer with a wiring pattern composed of a oxidizable metal silicide provided thereon except for portions of the layer on the side of the silicide and right thereunder. CONSTITUTION:A poly Si layer 11 is accumulated on a substrate 1 provided with an oxide film 6 (for example, 4,000Angstrom ) and, for example, a wiring body 12 made of MOSi2 is provided (for examle, 7,000Angstrom ) on a lower layer wiring forming region on the surface thereof. Then, a nitride film mask 13 is provided and unmasked MOSi2 and poly Si are converted into SiO2 films 14 and 15. Then, after the removal of the nitride film 13, for example, an upper layer wiring 16 is made of Al is so arranged to make a multilayer interconnection structure connected to the lower layer wiring body 12. This reduces the surface step for forming the upper layer wiring while giving a gentle shape to the connection section thereby eliminating disconnection in the fine pattern. |
