| 摘要 |
PURPOSE:To enable the miniaturization of a transistor chip and a low VCE, by reducing the impurity density of the region on a part close to the surface more than that of the region on the lower side thereof among one conductive semiconductor regions. CONSTITUTION:An N type collector region 7 is formed on an N type substrate 6 by an epitaxial growing method, and a collector region 8 with further lower impurity density is formed thereon by an epitaxial method. Next, a base region 9 having P type conducitivty and an n type conductive emitter region 10 are fromed by using a selective diffusion method, and thereafter electrode layers 12, 13 are formed by selectively removing an SiO2 film 11. Thus, since the RSC of the collector region can be reduced without deterioration of a withstand voltage, the miniaturization of a transistor chip and the application to a low VCE (SAT) are allowed. |
