| 摘要 |
PURPOSE:To obtain a photoreceptor high in acceptance potential and photosensitivity, small in dark decay, and having a surface blocking layer undamageable by a cleaning brush, etc., by laminating an Se-As photoconductive layer and a Ga-Se photoconductive layer on a conductive substrate in a regular order. CONSTITUTION:A 45-70mum thick Se-As photoconductive layer contg. 30- 40 atomic % As is vapor deposited on a conductive substrate of an aluminum plate or the like, and on this layer a 0.5-1.5mum thick Ga-Se photoconductive layer contg. 0.3-10 atomic % Ga. Formation of the Ga-Se layer enhances photosensitivity characteristics and acceptance potential, reduces dark decay, and forms a photoreceptor not deteriorating characteristics against long use, because its surface is not damaged by friction of a cleaning brush or blade. |
