| 摘要 |
PURPOSE:To provide a device which is constituted a such that a current is applied from a current setting means to the extent that breakdown is not produced, and after a fall voltage, generated at a semiconductor part, is measured and stored, and a minimum surge breakdown resistant amount is calculated from the relation between a fall voltage, calculated beforehand, and a surge breakdown resistance amount. CONSTITUTION:Parts of semiconductor to be measured are individually connected in turn to a current setting means 3 by means of a switching means 2, and a current, whose level changes, is continuously supplied and applied in a pulsing manner in the reverse direction. This causes production of a noise voltage, which varies in capacity, at the semiconductor to be measured, and the noise voltage is converted via a voltage measuring means 5 by means of a A-D converting means 6 to be stored in a memory means 7. A surge breakdown resistance amount is found from an established relation between a noise voltage En, read out from the memory means 7, and a surge breakdown resistance amount P. This permits the identification of the semiconductor part to be measured, which is susceptible to deteriorate, out of a plural number of the semiconductor parts to be measured, and enables to perform an improved selection and judgement of the quality as compared with the conventional methods. |
