| 摘要 |
PURPOSE:To eliminate the problem of storing charge and the occurrence of stress by removing only an insulating film at the side face of a semiconductor substrate and emitting charged particle beam while maintaining an electric contact via the side face of the substrate. CONSTITUTION:An electron sensitive resist 508 is coated on a machined silicon oxidized film 202, is installed on an electron beam exposure device at a specimen base 510, an electron beam of approx. 10-30kV of accelerating voltage is emitted, is passed through the oxidized film while partly applying the energy to the resist, is thus arrived at a semiconductor substrate 101, is then escaped to an earth through a wire 509 formed at the side face from which an insulating film is removed, thereby preventing the charging of the substrate 101 and performing a normal exposure. After the exposure is finished, the resist is exfoliated by dry etching, and a patternd oxidized film can be obtained. In this manner, the deformation of the substrate can be reduced, and the diffusion of the impurity can be reduced. |
