| 摘要 |
PURPOSE:To provide triode characteristics readily with good reproducibility by forming an insulating layer having a thickness larger than the source and drain regions at the groove formed at the part for isolating the source region and the drain region of a semiconductor substrate. CONSTITUTION:A nitrided film is formed on source and drain forming regions on a semiconductor substrate 1, grooves are formed on a channeled region, an oxidized film 10 is formed by a Wett oxidizing method, the nitrided film is then removed, an impurity is diffused to form source and drain regions 8, 9, the film 10 is raised higher than the regions 8, 9, and a gate electrode 11 is formed thereon. Since the ratio of the channel length to the gate insulating film thickness can be formed with good controllability, triode characteristics can be readily provided with good reproducibility. |
