| 摘要 |
PURPOSE:To eliminate effect of optical distortion of a projecting lens or the like, by actually exposing a part of resist formed on a region serving as a measurement mark on an object to be exposed and aligning the mask based on a positional relation between the exposed part and a measurement mark. CONSTITUTION:A recessed region serving as a measurement mark 9 is formed on the top face of a wafer 1 and a resist 2 is deposited on the wafer 1 so as to flatten the top face thereof including the recessed region. An adjusting mask 6 having a pattern 7 formed at a position corresponding to the reference point in the recessed region is attached at a position where an exposure mask is to be provided. The resist 2 on the recessed region is exposed partially to form an exposed resist section 4, and measurement light is applied to this section 4. Intensities of light reflected by the boundary 5 and the exposed section 4 of the recessed region are measured and an exposure mask is aligned based on the positional relation between the boundary 5 and the exposed section 4 obtained from a difference between the intensities of the reflected light. According to this method, it is possible to prevent aligning error, which would be caused by optical distortion of a projecting lens or the like. |
