| 摘要 |
PURPOSE:To form an IGFET having triode characteristics with good reproducibility by setting a specific relationship between the ratio of the thickness of a gate insulating layer partly buried in a substrate to an interval between a source and a drain and a using drain voltage. CONSTITUTION:A gate insulating film 3 (its thickness of tox, its width L=an interval between a source and a drain) is so formed as to be partly buried in a semiconductor substrate 1 formed with a source 8 and a drain 9, and in an insulated gate FET formed with a gate electrode 7, a relationship of VDexp(-pi/2.L/tox)>0.001 is set between the thickness, the width and the voltage of using drain, where the voltage of using drain is represented by VD. Thus, an insulated gate FET having triode characteristics can be formed with good reproducibility. |
