发明名称 PLASMA ETCHING APPARATUS AND ETCHING METHOD
摘要 PURPOSE:To prevent an element to be etched from being corroded by providing means for connecting or separating a main etching chamber, a post-treatment chamber and a cassette chamber via partition valves in vacuum state. CONSTITUTION:An element to be etched, e.g., aluminum is conveyed by the operations of valves 9, 10 from a cassette chamber 2 to which the aluminum is conveyed to a main etching chamber 2 having parallel planar electrodes opposed to one another and means for applying high frequency electric power, the chamber is evacuated in vacuum, e.g., 10<-5> Torr or lower, a mixture gas of carbon tetrachloride and chlorine gas is introduced into the chamber, an electric discharge is taken place, and the aluminum is thus etched. Thereafter, a valve 14 is opened, the aluminum is moved to a post-treatment chamber 3, is treated with plasma of inert gas, is then conveyed to a cassette chamber 16, and is exhausted. Thus, the chlorine gas is not retained in the chamber, and the aluminum is not corroded.
申请公布号 JPS5713743(A) 申请公布日期 1982.01.23
申请号 JP19800087760 申请日期 1980.06.30
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 OKANO HARUO;YAMAZAKI TAKASHI;HORIIKE YASUHIRO
分类号 H01L21/302;H01J37/18;H01L21/3065;(IPC1-7):01L21/302 主分类号 H01L21/302
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