| 摘要 |
PURPOSE:To simplify the process of mask matching and the like in the impurity diffusing processes for the subject laser element by a method wherein a suitable film thickness for a semiconductor structure in the process of epitaxial growth is established. CONSTITUTION:A stripe-form mesa structure 1a is formed on an InP single crystal substrate by performing a chemical etching and the upper section of the structure 1 is formed in parallel with the plane of cleavage of the substrate 1. Then, on the substrate 1 having the structure 1a, an active semiconductor layer 2 containing an active semiconductor region 2a, the first upper clad layer 3, the second upper clad layer 4 and an electrode forming layer 5 are formed successively. A Zn diffusion is performed from the surface of the layer 5, a conductive type inverting layer 6 of the depth reaching the clad region 3a at the upper section of the mesa of the layer 3 is formed and after a P side electrode 7 has been formed, a wafer with the prescribed thickness is formed by grinding from the surface of the substrate 1. Lastly, an N side electrode 8 is formed and the buried type heterojunction laser element can be manufactured with a high yield rate. |
