| 摘要 |
PURPOSE:To realize a low power consumption, high degree of integration and high density for a semiconductor memory device and also ensure a high resistance to the cosmic rays, by producing a voltage higher than the power supply voltage of a peripheral circuit with use of the power source of the peripheral circuit and then supplying the voltage to a memory cell. CONSTITUTION:A power supply voltage generating circuit 4 operates on a voltage VP which is common to the power supply voltage VP3 of a peripheral circuit 1 and produces the power supply voltage VM5 which is higher than the voltage VP3 for memory array 2. The voltage VM5 is supplied to the array 2 via a power supply line 6. Thus a low voltage and a high voltage can be supplied preferably to the circuit 1 and the array 2 respectively. As a result, a low power consumption, high degree of integration and high density can be realized for a semiconductor memory with a high resistance to the cosmic rays. |
