| 摘要 |
PURPOSE:To prepare a high-quality doped amorphous silicon film without using a conventional hydrogen compound which is unstable and hazardous to the human body, by the sputtering process using a silicon target doped with impurities. CONSTITUTION:The reaction chamber 1 is evacuated to <=10<-6>Torr with a vacuum pump (not shown) connected to the evacuation pipe 7, and the substrate 9 is heated with the heater 5. Mixture of Ar and H2 is introduced into the chamber 1 through the gas inlet 6 until the pressure in the chamber reaches to about 10<-2>-10<-3>Torr. Keeping the above conditions, the high frequency source is actuated to bombard the target 2 with Ar ions, and the sputtered target atoms are deposited to the substrate 9. The target 2 is a high purity silicon doped with impurities (e.g. P). By this process, a doped amorphous silicon film (a-Si film) having stable qualities can be obtained without using a doping gas, e.g. PH3, which is hazardous to the human body. In the figure, 3 represents the substrate which acts also as an anode, and 4 represents the cathode. |
