| 摘要 |
PURPOSE:To compose a logic circuit having a small occupied area and superior design by connecting other normally OFF Tr connected through a gate, a drain, and a resistor to the drain electrode of a normally OFF Tr as a load. CONSTITUTION:A normally OFF GaAsMESFET 54 for load connected through a gate electrode 51, a drain electrode 52, and a resistor 53 is connected to the drain electrode 12 of a GaAs Schottky barrier gate field effect transistor (MESFET)11 as an active element. Such a current-voltage characteristic at a load section shows a saturation characteristic as shown in a drawing and the saturation current Is is almost equal to the saturation current of a same-shaped normally OFF GaAsMESFET. Register 53 is required to be made larger in order to ignore the current flowing into the resistor 53 as compared to the saturation current Is. |
