| 摘要 |
PURPOSE:To easily obtain the improvement of integrated density, an increase in power density, and superior characteristics design by directing the width direction of a main current path to the thickness direction of a substrate. CONSTITUTION:The length L and thickness d of the main current path of a semiconductor device such as an insulating gate field effect transistor having a main current path specified by the length L, thickness d, and width W nearly crossed at right angles each other are specified to the main surface of the substrate 1 in almost parallel direction and the width W is specified to the main surface of the substrate 1 in approximately right-angular direction respectively. The width W is made longer than the length L. |
