| 摘要 |
PURPOSE:To grow a superior film stably by a method wherein a high frequency electrode for generating plasma is mounted on an outer circumference of a reaction pipe, high frequency voltage is applied to the electrode, and a gas in the reaction pipe is changed into plasma. CONSTITUTION:The induction coil type plasma generating high frequency electrodes 9 are inserted into a diffusion oven 2, the reaction pipe 1 is inserted into the coils of said electrodes 9, and wafers 8 placed on a supporter 10 are inserted into the pipe. The inside of the reaction pipe 1 is brought to a vacuum condition by means of a vacuum pump 4, the gas is introduced from a piping 3, high frequency voltage is applied to the electrodes, the reaction gas in the reaction pipe is changed into plasma, the diffusion oven 2 is heated and the gas being changed into plasma forms a chemical reaction, and a silicon nitride film is made up on the surfaces of the wafers 8. Accordingly, since the high frequency electrodes and the wafers are separated by means of the reaction pipe, an electrode substance does not adhere on the wafers, and the superior film is grown. |
