| 摘要 |
PURPOSE:To provide a uniform growing of epitaxial layer having a superior characteristic of crystalization and flatness by a method wherein a crystal substrate plate for holding crystalized materials is arranged in a passage for molten liquid to be pushed into a growing chamber from a liquid tank by a pressing block. CONSTITUTION:Growing crystal substrate plates 11, 12 are provided in a growing chamber 10, a groove 16 and a crystal substrate plate 17 for holding the crystalization material are arranged at a part of the growing slider 9 having a passage 13 and nonliquid tank 15 corresponding to a passage for molten liquid pushed from the liquid tank to the growing chamber 10 by the pressing block, while the crystalized material present in the molten liquid is held and removed so as to cause over- saturated molten liquid to be saturated and melted. Thereby, it is possible to make a uniformly growing epitaxial layer having a better crystalization and flatness even in a crystal substrate placed thereon, and further a thickness of the film in a range of submicron order may easily be controlled. |
