| 摘要 |
PURPOSE:To grind the back of the semiconductor substrate without damage by a method wherein a constituting element is formed on the surface of the substrate, a photo-resist is applied on a surface protective film, and cured, the protective film is pasted on an abrasive base through pine resin, etc., the back of the substrate is ground, and removed and a resist film is taken away. CONSTITUTION:The photo-resist film 6 is applied on the surface of a material obtained by forming the semiconductor device consisting of diffusion layers 2, element separating insulating layers 3, an electrode 4 and the surface protective film 5 on the silicon substrate 1 with 600mum thickness, and cured. The surface side is pasted on the abrasive base with pine resin, and the back side is ground with an abrasive up to 300mum, and removed. The pine resin is taken away, and the photo- resist film 6 is removed in oxygen plasma. Accordingly, the thermal stress of the silicon substrate with a large bore can be grinding-compensated without damaging the device. |
