| 摘要 |
PURPOSE:To reduce the number of marks by a method wherein an exposing region is divided into a plurality of fields, a mark is put on a top left-hand corner of the first drawing region, the deflection width of the electron beams is obtained on the basis of the amount of movement at the time when the regions move so that the mark reaches a bottom right-hand corner, and the regions are exposed successively. CONSTITUTION:Marks XA, XB, YA, YB are put previously on a peripheral section of a wafer 5, and the wafer is set on a stage on the basis of the coordinate data of the marks. Each chip of the wafer is divided into fields such as nine fields F1-F9 before exposing, the crossed mark M is put previously on the top left-hand corner of the drawing staring field, the amounts LX, LY of the movement of the stage in the case when the mark is moved to the bottom right-hand corner first are measured beforhand, the stage is shifted only by the amounts of movement when the drawing regions are transferred, and the deflection width of the electron beams is decided. Accordingly, the marks put on the chips are reduced, and a design for a circuit is simplified. |
