| 摘要 |
PURPOSE:To anneal an ion injection layer on the surface of a semiconductor substrate uniformly by a method wherein layer rays are absorbed efficiently in a dielectric film formed on the surface of the substrate, and the dielectric film is heated. CONSTITUTION:An ion injection mask layer 5 is formed on the single crystal silicon semiconductor substrate 4, a window 5a is bored where ions are injected selectively, the impurity ions of boron, etc. are injected through the window, and the ion injection layer 6 is made up on the surface of the substrate 4. The mask layer 5 is removed by means of etching, the dielectric film 7 with uniform thickness consisting of a film such as a SiO2 film is built up on the substrate 4, a laser such as a CO2 laser having a wavelength at an absorption peak is irradiated to the dielectric film, the ion injection layer 6 is annealed by the heat and the layer 6 is activated. Accordingly, the optimum condition for annealing is determined by the power of the laser and the thickness of the film 7, and annealing can be uniformalized. |
